absolute maximum ratings ( t j = 25c unless otherwise specified ) symbol parameter condition ratings units v drm repetitive peak off-state voltage 600 v i t(rms) r.m.s on-state current t c = 86 c 25 a i tsm surge on-state current one cycle, 50hz/60hz, peak, non-repetitive 225/250 a i 2 t i 2 t 260 a 2 s p gm peak gate power dissipation 5.0 w p g(av) average gate power dissipation 0.5 w i gm peak gate current 2.0 a v gm peak gate voltage 10 v t j operating junction temperature - 40 ~ 125 c t stg storage temperature - 40 ~ 150 c mass 6.2 g june, 2007. rev. 1 features repetitive peak off-state voltage : 600v r.m.s on-state current ( i t(rms) = 25 a ) high commutation dv/dt general description this device is suitable for ac switching application, phase control application such as fan speed and temperature mod- ulation control, lighting control and static switching relay. 2.t2 3.gate 1.t1 symbol ? ? ? to-3p ? 1 2 3 1/5 stw25a60 semiwell semiconductor bi-directional triode thyristor copyright@semiwell semiconductor co., ltd., all rights reserved
electrical characteristics symbol items conditions ratings unit min. typ. max. i drm repetitive peak off-state current v d = v drm , single phase, half wave t j = 125 c 5.0 ma v tm peak on-state voltage i t = 35 a, inst. measurement 1.4 v i + gt1 gate trigger current v d = 6 v, r l =10 ? 30 ma i - gt1 ? 30 i - gt3 ? 30 v + gt1 gate trigger voltage v d = 6 v, r l =10 ? 1.5 v v - gt1 ? 1.5 v - gt3 ? 1.5 v gd non-trigger gate voltage t j = 125 c, v d = 1/2 v drm 0.2 v (dv/dt)c critical rate of rise off-state voltage at commutation t j = 125 c, [di/dt]c = -12.5 a/ms, v d =2/3 v drm 6 v/ k i h holding current 35 ma r th(j-c) thermal impedance junction to case 1.3 c/w stw25a60 2/5
-50 0 50 100 150 0.1 1 10 v + gt1 v _ gt1 v _ gt3 v gt (t o c) v gt (25 o c) junction temperature [ o c] 10 0 10 1 10 2 0 40 80 120 160 200 240 280 60hz 50hz surge on-state current [a] time (cycles) 0 5 10 15 20 25 30 80 90 100 110 120 130 = 90 o = 150 o = 60 o = 30 o = 180 o = 120 o allowable case temperature [ o c] rms on-state current [a] 0 5 10 15 20 25 30 0 5 10 15 20 25 30 35 = 90 o = 150 o = 60 o = 30 o = 180 o = 120 o power dissipation [w] rms on-state current [a] 0.5 1.0 1.5 2.0 2.5 3.0 3.5 10 0 10 1 10 2 10 3 t j = 125 o c t j = 25 o c on-state current [a] on-state voltage [v] 10 1 10 2 10 3 10 -1 10 0 10 1 v gd (0.2v) i gm (2a) 25 ? p g (av) (0.5w) p gm (5w) v gm (10v) gate voltage [v] gate current [ma] stw25a60 3/5 fig 1. gate characteristics fig 2. on-state voltage fig 3. on state current vs. maximum power dissipation fig 4. on state current vs. allowable case temperature fig 5. surge on-sta te current rating ( non-repetitive ) fig 6. gate trigger voltage vs. junction temperature ? ? 2 t 360 t ? : conduction angle ? ? 2 t 360 t ? : conduction angle
-50 0 50 100 150 0.1 1 10 i _ gt3 i + gt1 i _ gt1 i gt (t o c) i gt (25 o c) junction temperature [ o c] 10 -2 10 -1 10 0 10 1 0.1 1 10 transient thermal impedance [ o c/w] time (sec) 4/5 stw25a60 fig 8. transient thermal impedance fig 7. gate trigger current vs. junction temperature fig 9. gate trigger characteristics test circuit ? a v 10 ? 6v r g ? ? ? a v 10 ? 6v r g ? ? ? a v 10 ? 6v r g ? ? test procedure test procedure ? test procedure ?
to-3p package dimension 5/5 stw25a60 corresponding symbol measurement a(mm) 15.600.20 a1(mm) 13.600.20 a2(mm)dia. 9.600.20 b(mm) 19.900.20 b1(mm) 13.900.20 b2(mm) 12.760.20 b3(mm) 3.800.20 c(mm) 20.000.30 c1(mm) 3.500.20 c2(mm) 16.500.30 d(mm) 5.45(typ) d1 2.0 0.20 d2 3.00.20 d3 1.000.20 e(mm) 4.800.20 +0.15 e1(mm) 1.50 -0.05 e2(mm) 1.400.20 f(mm) 18.700.20 +0.15 g(mm) 0. 60 -0.05 (mm) 3.200.10
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